breakdown region
英 [ˈbreɪkdaʊn ˈriːdʒən]
美 [ˈbreɪkdaʊn ˈriːdʒən]
击穿范围（电压）；（材料）击穿区
双语例句
- A unified breakdown model of SOI RESURF device with uniform, step, or linear drift region doping profile is firstly proposed.
提出了一个均匀、阶梯和线性掺杂漂移区SOI高压器件的统一击穿模型。 - In order to obtain good compromise of the breakdown voltage and the specific on-resistance of SOI-LDMOS, a SOI-LDMOS with trench oxide in drift region is proposed.
为了获得SOI-LDMOS器件耐压和比导通电阻的良好折衷，提出了一种漂移区槽氧SOI-LDMOS高压器件新结构。 - The simulation result shows that the current distribution is closely related to the voltage gradient applied on the varistor, and concentrated on few paths especially on breakdown region.
结果表明电阻片内微观电流分布与电压梯度紧密相关，低电场区和高电场区比较均匀，而在中电场区分布很不均匀。 - Breakdown Characteristics of Novel SOI-LDMOS with Reducing Field Electrode and U-Type Drift Region
具有降场电极U形漂移区SOI-LDMOS的耐压特性 - It also analyzes the breakdown mechanism of different normalized base region rectifiers at different temperatures.
文中还对不同归一化基区元件在不同温度下的击穿机理进行了分析。 - To better analyze breakdown characteristics of 4H-SiC BC MOSFET, the depth of the device and the width of drain region should be increased in terms of the requirement of MEDICI.
为正确地模拟4H-SiC埋沟MOSFET的击穿特性，合理地设置了器件的深度和漏区的宽度。 - The dependence of breakdown voltage on the length and doping concentration of the drift region is also calculated.
计算了漂移区长度，掺杂浓度和击穿电压的关系。 - Compared with conventional TG-LDMOS, the breakdown voltage of the new structure is improved by 30V with the same length of the drift region and on-state resistance, and the structure shows excellent RF characteristics.
与传统的槽栅器件结构相比，新结构在相同的漂移长度和导通电阻下，击穿电压提高了30V，并表现出优异的频率特性。 - The reverse breakdown voltage may be related to the width of the active region.
反向击穿电压可能和作用区的宽度有关。 - The linear relation between the reverse breakdown voltage and un-doping active region ′ s thickness of PIN light emitting diode ( LED) was analyzed by using the ideal PIN structure ′ s electric field distribution model.
通过利用突变结PIN理想结构电场分布模型，分析了该结构发光二极管（LED）反向击穿电压与非故意掺杂有源区厚度的线性相关性。 - The dependence of breakdown voltages of the thin film SOI devices on the concentration gradient in the linearly doped drift region is experimentally investigated for the first time.
首次对薄膜SOI功率器件的击穿电压与线性掺杂漂移区的杂质浓度梯度的关系进行了实验研究。 - VLT is a novel technology which can greatly improve the breakdown voltage and reduce specific on-resistance. However, the biggest challenge is how to manufacture the gradient drift region thickness increasing from the source to the drain.
VLT技术是一种可以同时大幅度改善击穿电压和降低导通电阻的新技术，但其难点在于从工艺上如何制造从源到漏逐渐变化的漂移区厚度。 - Schottky barrier diode as a majority carrier device with high switching speed has been widely used in power circuit. But, in order to achieve high breakdown voltage, the concentrate of the drift region need to be lower enough, and the specific on-resistance improved a lot.
肖特基势垒二极管作为一种多子器件具有很高的开关速度，但是要做到耐压很高就需要降低漂移区载流子的浓度，从而使正向导通电阻很大。